High-frequency device including high-frequency switching circuit

Patent metadata

Field	Value
Publication number	US-9105564-B2
Application number	US-201314029996-A
Country	US
Kind code	B2
Filing date	Sep 18, 2013
Priority date	Jul 20, 2005
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A high-frequency device includes at least an insulating substrate, a semiconductor substrate, a switching circuit, and an electrode. The semiconductor substrate is on the insulating substrate. A switching circuit is within an active region of the semiconductor substrate. The electrode is in contact with the semiconductor substrate such that a voltage signal can be applied to the semiconductor substrate via the electrode.

First claim

What is claimed is:

1. A high-frequency device having a switching circuit, the device comprising:
an insulating substrate;
a semiconductor substrate on the insulating substrate;
an active region on a first surface of the semiconductor substrate, the first surface facing away from the insulating substrate;
a switching circuit including a first field-effect transistor and a second field-effect transistor within the active region;
a power supply connection terminal electrical…

Assignees

• Sony Corp

Inventors

• Kohama Kazumasa

Classifications

• H10W90/753

  Electricity · mapped topic

• H10W72/5445

  Electricity · mapped topic

• H10W72/932

  Electricity · mapped topic

• H10W44/251

  Electricity · mapped topic

• H10W74/129

  Electricity · mapped topic