LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR PROVIDING MERGED FinFETs
US-2015380489-A1 · Dec 31, 2015 · US
Conformal doping for FinFET devices
US9105559B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105559-B2 |
| Application number | US-201314028517-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2013 |
| Priority date | Sep 16, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A conformal doping process for FinFET devices on a semiconductor substrate which includes NFET fins and PFET fins. In a first exemplary embodiment, an N-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in an N-type dopant from the N-type dopant composition into the NFET fins. A P-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in a P-type dopant from the P-type dopant composition into the PFET fins. In a second exemplary embodiment, one of the NFET fins and PFET fins may be covered with a first dopant composition and then a second dopant composition may cover both the NFET fins and the PFET fins followed by an anneal to drive in both dopants.
First claim
Opening claim text (preview).
What is claimed is: 1. A conformal doping process for FinFET devices comprising: forming a first plurality of fins on a semiconductor substrate; forming a first plurality of gates with each gate of the first plurality of gates wrapping around a central portion of at least one of the fins of the first plurality of fins so as to leave end portions of the first plurality of fins exposed, the first plurality of fins and first plurality of gates being for N-type FinFET devices (NFETs…
Assignees
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Classifications
- H10P32/1204Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P10/00Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105559B2 cover?
- A conformal doping process for FinFET devices on a semiconductor substrate which includes NFET fins and PFET fins. In a first exemplary embodiment, an N-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in an N-type dopant from the N-type dopant composition into the NFET fins. A P-type dopant composition is co…
- Who is the assignee on this patent?
- IBM, Globalfoundries Inc, Global Foundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P32/1204. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).