Silicon carbide semiconductor device and method for manufacturing the same
US-9224645-B2 · Dec 29, 2015 · US
Silicon carbide semiconductor device and manufacturing method of the same
US9105558B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105558-B2 |
| Application number | US-201414197542-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2014 |
| Priority date | Apr 8, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a Pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of Si—H.
First claim
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What is claimed is: 1. A silicon carbide semiconductor device comprising: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner, wherein carbon atoms in one of the principal surface and the backside of the silicon carbide semiconductor substrate are terminated by the carbon atoms coupling wit…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D64/0115Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105558B2 cover?
- A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semic…
- Who is the assignee on this patent?
- Denso Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0115. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).