Chip packaging method, chip packaging module, and embedded substrate chip packaging structure
US-2024413138-A1 · Dec 12, 2024 · US
US9105557B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105557-B2 |
| Application number | US-201313920933-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 18, 2013 |
| Priority date | Jun 27, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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The present disclosure is related to alleviation of at least some of the drawbacks of the previously known implementations and to provide an improved alternative. Generally, at least some of the embodiments are related to a high voltage power conversion semiconductor device, in particular a SiC Schottky-barrier power rectifier device, having a planarized surface.
Opening claim text (preview).
What is claimed is: 1. A power rectifier device, comprising: a drift layer including silicon carbide; and a Schottky electrode disposed on the drift layer, the Schottky electrode and a surface of the drift layer providing a Schottky contact, the drift layer having a planarized surface such that a depth of each of a plurality of pits of the surface of the drift layer is less than approximately D max E b /F a , where E b is a metal-semiconductor barrier height and F a is an av…
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