Methods of forming patterns of a semiconductor device
US-2015076617-A1 · Mar 19, 2015 · US
Double sidewall image transfer process
US9105510B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105510-B2 |
| Application number | US-201414461745-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2014 |
| Priority date | Dec 10, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers.
First claim
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What is claimed is: 1. A device comprising: a substrate; a first fin in the substrate; a second fin in the substrate being separated from the first fin by a first distance; a third fin in the substrate being separated from the second fin by a second distance, and being separated from the first fin by the second fin, wherein the first and second distances are different; and a fourth fin in the substrate separated from the third fin by the first distance, the fourth fin bein…
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Classifications
- H10P50/696Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105510B2 cover?
- Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P50/696. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).