Semiconductor device and method for forming the same

Patent metadata

Field	Value
Publication number	US-9105504-B2
Application number	US-201414229637-A
Country	US
Kind code	B2
Filing date	Mar 28, 2014
Priority date	Jul 1, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A semiconductor device and a method for forming the same are disclosed, which relate to a reservoir capacitor. The semiconductor device includes: an active region defined by forming a device isolation region over a semiconductor substrate of peripheral region; gate electrodes formed over the active region; a plurality of metal lines over the gate electrodes; a plurality of contact slits elongated into the gate electrode at a position between the plurality of metal lines, a plurality of the first capacitors respectively formed over the plurality of metal lines, and a plurality of the second capacitors respectively formed over the plurality of contact slits.

First claim

What is claimed is:

1. A semiconductor device comprising:
an active region defined by a device isolation region over a semiconductor substrate of peripheral region;
gate electrodes disposed over the active region;
a plurality of metal lines over the gate electrodes;
a plurality of contact slits, each extending between the gate electrodes and further extending between the plurality of metal lines;
a plurality of first capacitors respectively disposed over the plurality of m…

Assignees

• Sk Hynix Inc

Inventors

• Kim Jung Sam

Classifications

• H10D1/716

  Electricity · mapped topic

• H10B12/34

  Electricity · mapped topic

• H10B12/053

  Electricity · mapped topic

• H10B12/09

  Electricity · mapped topic

• H10B12/0335

  Electricity · mapped topic