Semiconductor device, method of manufacturing thereof, signal transmission/reception method using such semiconductor device, and tester apparatus

Patent metadata

Field	Value
Publication number	US-9105501-B2
Application number	US-201414279603-A
Country	US
Kind code	B2
Filing date	May 16, 2014
Priority date	Jan 29, 2008
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A semiconductor device includes a substrate, an internal circuit including a plurality of transistors provided over the substrate, an insulating film provided over the substrate, a bonding pad provided over the insulating film, an inductor being formed in the insulating film, the inductor carrying out a signal transmission/reception to/from an external device in a non-contact manner by an electromagnetic induction and being electrically coupled to the internal circuit. The inductor includes a first conducting layer, and the bonding pad includes a second conducting layer. The first conducting layer includes a lower level layer than the second conducting layer in a thickness direction of the substrate. In a plan view, the inductor includes a first portion overlapping the bonding pad and a second portion not overlapping the bonding pad.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
an internal circuit including a plurality of transistors provided over the substrate;
an insulating film provided over the substrate; and
a bonding pad provided over the insulating film;
an inductor being formed in the insulating film, the inductor carrying out a signal transmission/reception to/from an external device in a non-contact manner by an electromagnetic induction and being electrically coupl…

Assignees

• Renesas Electronics Corp

Inventors

• Nakashiba Yasutaka

Classifications

• H10W72/07551

  Electricity · mapped topic

• H10W72/90

  Electricity · mapped topic

• H10W72/50

  Electricity · mapped topic

• H10W72/00

  Electricity · mapped topic

• H10W44/501

  Electricity · mapped topic