Diode and method of making the same
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Semiconductor structure and semiconductor device having the same
US9105491B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105491-B2 |
| Application number | US-201314041336-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2013 |
| Priority date | Sep 30, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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The invention provides a semiconductor structure and a semiconductor device having such semiconductor structure. The semiconductor structure includes: a substrate; a first well having a first conductivity type, which is provided on the substrate; a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction; and a plurality of mitigation regions having the first conductivity type or the second conductivity type, provided in the first well and being close to the boundary in a lateral direction and penetrating the first well in a vertical direction.
First claim
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What is claimed is: 1. A semiconductor structure, comprising: a substrate; a first well having a first conductivity type, provided on the substrate; a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction, the second conductivity type being opposite to the first conductivity type; and a plurality of first mitigation regions having the first conductivity type with a doping concentration lower than a doping…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105491B2 cover?
- The invention provides a semiconductor structure and a semiconductor device having such semiconductor structure. The semiconductor structure includes: a substrate; a first well having a first conductivity type, which is provided on the substrate; a second well having a second conductivity type and contacting the first well at a boundary in between in a lateral direction; and a plurality of miti…
- Who is the assignee on this patent?
- Huang Tsung-Yi, Richtek Technology Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D62/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).