SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Semiconductor device
US9105486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105486-B2 |
| Application number | US-201414150477-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 8, 2014 |
| Priority date | Apr 5, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device includes a first conductive type semiconductor substrate, a second conductive type active region formed on a top surface side of the semiconductor substrate, a second conductive type inside VLD region formed to contact the active region on the top surface side in a plan view, and a second conductive type well region formed to contact a portion opposite to the portion contacting the active region of the inside VLD region on the top surface side in a plan view. The well region is formed to be deeper than the active region. The inside VLD region has the same depth as that of the active region in the portion contacting the active region, the depth gradually increasing from the active region toward the well region and becoming the same as the depth of the well region in the portion contacting the well region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first conductive type semiconductor substrate; a second conductive type active region formed on a top surface side of the semiconductor substrate; a second conductive type inside VLD region formed so as to contact the active region on a top surface side of the semiconductor substrate in a plan view; and a second conductive type well region formed so as to contact a portion opposite to the portion contacting the acti…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D12/00Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D12/481Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105486B2 cover?
- A semiconductor device includes a first conductive type semiconductor substrate, a second conductive type active region formed on a top surface side of the semiconductor substrate, a second conductive type inside VLD region formed to contact the active region on the top surface side in a plan view, and a second conductive type well region formed to contact a portion opposite to the portion cont…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D12/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).