Semiconductor devices and methods for manufacturing the same
US-2015325703-A1 · Nov 12, 2015 · US
Nanowire PIN tunnel field effect devices
US9105482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105482-B2 |
| Application number | US-201213556300-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2012 |
| Priority date | Jan 8, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A nanowire tunnel device, comprising: a nanowire spaced apart and above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, the gate structure comprising a metal layer and a conductive polysilicon capping layer disposed directly onto and encapsulating the metal layer; a first protective spacer adjacent to a sidewall of t…
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Classifications
Electricity · mapped topic
- H10P30/222Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105482B2 cover?
- A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second por…
- Who is the assignee on this patent?
- Bangsaruntip Sarunya, Koester Stephen J, Majumdar Amlan, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P30/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).