Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Semiconductor structure
US9105481B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105481-B2 |
| Application number | US-201314010713-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 27, 2013 |
| Priority date | Mar 18, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.
First claim
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What is claimed is: 1. A semiconductor structure, comprising: a substrate; at least a first N-type germanium structure formed on the substrate, wherein the first N-type germanium structure comprises two end parts and at least a first central part bonded between the two end parts thereof, the first central part is floated over the substrate and has a distance to the substrate with respective to the two end parts, and a side surface of the first central part is a {111} germanium c…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9105481B2 cover?
- A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a si…
- Who is the assignee on this patent?
- Nat Applied Res Laboratories
- What technology area does this patent fall under?
- Primary CPC classification H10D30/014. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).