Methods for the fabrication of graphene nanoribbon arrays using block copolymer lithography

Patent metadata

Field	Value
Publication number	US-9105480-B2
Application number	US-201313829078-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 14, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.

First claim

What is claimed is:

1. A method of fabricating a graphene nanoribbon array, the method comprising:
forming a graphoepitaxy channel over a graphene substrate, the channel comprising side walls and a floor;
depositing a layer of a surface-modifying copolymer on the side walls and the floor of the channel;
depositing a block copolymer in the channel and subjecting the block copolymer to conditions under which spatial confinement of the block copolymer by the channel induces the b…

Assignees

• Wisconsin Alumni Res Found

Inventors

• Arnold Michael S
• Gopalan Padma
• Safron Nathaniel S
• Kim Myungwoong
• Choi Jonathan Woosun

Classifications

• H10P95/08

  Electricity · mapped topic

• H10P50/695

  Electricity · mapped topic

• H10P50/287

  Electricity · mapped topic

• H10P50/283

  Electricity · mapped topic

• H10P50/242

  Electricity · mapped topic