Electro-static discharge protective circuit and display substrate and display device having the same
US-9225166-B2 · Dec 29, 2015 · US
Semiconductor device
US9105470B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105470-B2 |
| Application number | US-201414249505-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 10, 2014 |
| Priority date | May 7, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
First claim
Opening claim text (preview).
What is claimed is: 1. A switching component comprising a control element and an integrated circuit, the integrated circuit comprising: a first transistor element comprising first transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate; and a second transistor element electrically connected in parallel to the first transistor element, the second transistor element comprising: second transistors,…
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Classifications
- H10D89/601Primary
Electricity · mapped topic
- H01L27/0251Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105470B2 cover?
- A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substr…
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10D89/601. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).