Vertical bit line wide band gap TFT decoder

Patent metadata

Field	Value
Publication number	US-9105468-B2
Application number	US-201314020647-A
Country	US
Kind code	B2
Filing date	Sep 6, 2013
Priority date	Sep 6, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.

First claim

What is claimed is:

1. A non-volatile storage system, comprising:
a substrate that extends horizontally;
a three dimensional memory array of memory cells;
a plurality of word lines coupled to the memory cells;
a plurality of global bit lines;
a plurality of vertically oriented bit lines coupled to the memory cells, wherein the vertically oriented bit lines are oriented vertically with respect to the substrate;
a plurality of vertically oriented thin film transistor (TFT)…

Assignees

• Sandisk 3D Llc

Inventors

• Rabkin Peter
• Higashitani Masaaki

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/2914

  Electricity · mapped topic

• H10D99/00

  Electricity · mapped topic

• H10D86/441

  Electricity · mapped topic

• H10D86/0221

  Electricity · mapped topic