High electron mobility transistor and manufacturing method thereof
US-9209266-B2 · Dec 8, 2015 · US
Semiconductor structure with rare earth oxide
US9105464B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105464-B2 |
| Application number | US-201213816173-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2012 |
| Priority date | Oct 19, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A semiconductor structure with a rare earth oxide is provided. The semiconductor structure comprises: a semiconductor substrate ( 100 ); and a plurality of insulation oxide layers ( 201, 202 . . . 20 x ) and a plurality of single crystal semiconductor layers ( 301, 302 . . . 30 x ) alternately stacked on the semiconductor substrate ( 100 ). A material of the insulation oxide layer ( 201 ) contacted with the semiconductor substrate ( 100 ) is any one of a rare earth oxide, SiO 2 , SiO x N y and a combination thereof, a material of other insulation oxide layers ( 202 . . . 20 x ) is a single crystal rare earth oxide.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure with a rare earth oxide, comprising: a semiconductor substrate; and a plurality of insulation oxide layers and a plurality of single crystal semiconductor layers alternately stacked on the semiconductor substrate, wherein a material of the insulation oxide layer contacted with the semiconductor substrate is any one of a rare earth oxide, SiO 2 , SiO x N y and a combination thereof, a material of other insulation oxide layers is…
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Electricity · mapped topic
Electricity · mapped topic
- H10D64/01356Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105464B2 cover?
- A semiconductor structure with a rare earth oxide is provided. The semiconductor structure comprises: a semiconductor substrate ( 100 ); and a plurality of insulation oxide layers ( 201, 202 . . . 20 x ) and a plurality of single crystal semiconductor layers ( 301, 302 . . . 30 x ) alternately stacked on the semiconductor substrate ( 100 ). A material of the insulation oxide layer ( 201 ) c…
- Who is the assignee on this patent?
- Univ Tsinghua
- What technology area does this patent fall under?
- Primary CPC classification H10D64/01356. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).