Substrate Processing Method, Apparatus, and System
US-2024363405-A1 · Oct 31, 2024 · US
Plasma processing method and plasma processing apparatus
US9105451B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105451-B2 |
| Application number | US-201113009278-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 19, 2011 |
| Priority date | Jan 19, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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- Abstract
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Abstract
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A plasma processing apparatus performs generating plasma only with the carrier gas without the supply of the processing gas after the end of processing to the substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A plasma processing apparatus comprising: a plasma generator configured to generate plasma within a vacuum container; a biasing power source configured to apply bias via a substrate holder on which a substrate to be processed within the vacuum container is loaded; gas supply sources configured to respectively supply processing gas and He gas as carrier gas into the vacuum container; and a controller configured to control the plasma generator, the biasing power source, and the gas supply sources, such that a plasma is generated with the carrier gas; wherein the controller is configured to and maintain the generated plasma so as to clean processed substances which have adhered to an inner wall of the vacuum container, and perform plasma continuation only with the carrier gas and without the supply of the processing gas, after the end of processing of the substrate. 2. The plasma processing apparatus according to claim 1 , wherein the controller is configured to execute the processing of the substrate by introducing the processing gas and applying the bias after the carrier gas is introduced and the generation of the plasma is set to ON, and when the processing of the substrate ends, execute carrying-out of the substrate after the application of the bias is set to OFF, the introduction of the processing gas is set to OFF, the introduction of the carrier gas is set to OFF, and the generation of the plasma is set to OFF. 3. The plasma processing apparatus according to claim 1 , wherein the controller is configured to execute the control maintaining the generated plasma only with the carrier gas and without the supply of the processing gas until the generation of the plasma is set to OFF after the introduction of the processing gas is set to OFF.
Assignees
Inventors
Classifications
- H01J37/32449Primary
Gas control, e.g. control of the gas flow · CPC title
Gas supply means · CPC title
Arrangement for selecting ions or species in the plasma · CPC title
Polarising the substrate · CPC title
Plasma immersion ion implantation · CPC title
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Frequently asked questions
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- What does patent US9105451B2 cover?
- A plasma processing apparatus performs generating plasma only with the carrier gas without the supply of the processing gas after the end of processing to the substrate.
- Who is the assignee on this patent?
- Makino Hiroyuki, Tanaka Masaru, Sumitomo Heavy Industries
- What technology area does this patent fall under?
- Primary CPC classification H01J37/32449. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).