Substrate processing apparatus, substrate processing system, and maintenance method
US-2024339306-A1 · Oct 10, 2024 · US
US9105447B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105447-B2 |
| Application number | US-201314011305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 27, 2013 |
| Priority date | Aug 28, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.
Opening claim text (preview).
What is claimed is: 1. A method of operating a plasma processing chamber comprising: sustaining a plasma in contact with a substrate on a substrate support within the plasma processing chamber; accessing an effective capacitance, C 1 , of the substrate support; providing a modified periodic voltage function to the substrate support in order to effect a potential on a surface of the substrate, the modified periodic voltage function formed from a combination of a periodic volta…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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