Non-volatile memory and methods of fabricating the same
US-2024268126-A1 · Aug 8, 2024 · US
Forming a characterization parameter of a resistive memory element
US9105360B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105360-B2 |
| Application number | US-201313789123-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 7, 2013 |
| Priority date | Mar 7, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: defining an incremental signal that comprises at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element; repeatedly performing a characterization procedure involving: applying a signal to the resistive memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first…
Assignees
Inventors
Classifications
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9105360B2 cover?
- An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during e…
- Who is the assignee on this patent?
- Seagate Technology Llc
- What technology area does this patent fall under?
- Primary CPC classification G11C29/50008. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).