Data receiving circuit for chiplet based storage architectures
US-2024371422-A1 · Nov 7, 2024 · US
US9105317B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105317-B2 |
| Application number | US-201213611867-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2012 |
| Priority date | Jan 13, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Provided are a semiconductor memory device and a memory system including the same, which may calibrate a level of an output voltage in consideration of channel environment and a mismatch in on-die termination (ODT) resistance of a memory controller. The memory system includes a memory controller and a semiconductor memory device. The semiconductor memory device is configured to generate a reference voltage based on driving information of the memory controller, and calibrate an output voltage level based on a reference voltage when the semiconductor memory device is electrically connected to the memory controller.
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What is claimed is: 1. A memory system comprising: a memory controller; and a semiconductor memory device including, an output circuit configured to output data stored in a memory cell array to the memory controller via output pads; an on-die-termination (ODT) calibration circuit configured to calibrate termination resistances connected to the output pads; and an output voltage level calibration circuit configured to, generate a reference voltage based on driving informati…
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