Data recovery on cluster failures and ECC enhancements with code word interleaving

Patent metadata

Field	Value
Publication number	US-9104591-B2
Application number	US-201313754644-A
Country	US
Kind code	B2
Filing date	Jan 30, 2013
Priority date	Dec 11, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Techniques are presented for dealing with errors that arise from cluster fails, where a number of memory cells in the same area fail. An ECC code word can tolerate a given total amount of error while still being able to still be decoded, so that if error due to clusters can be identified and removed or lessened, it may be possible to still decode the word not otherwise decodable. After identifying possible error bit cluster locations, one or more bits in the cluster locations are flipped to see if the data content of the code word can be extracted. For embodiments using LDPC ECC code, uncertainty can be added for the bits of a suspected cluster location. To reduce the effects of cluster failures, code words can be interleaved within a page and the difference code words can have differing levels of ECC capability.

First claim

It is claimed:

1. A method of operating a non-volatile memory system, the memory system including a memory circuit, the memory circuit haying an array of memory cells formed along bit lines and word lines and a controller circuit connected to the memory circuit and having ECC (error correction code) circuitry, the method comprising:
receiving a page of data from a host by the controller circuit;
fanning the page of data into a plurality of ECC code words by the controller circuit, including:
separating the page of data into a corresponding plurality of sets of user data;
for each of the sets of user data, generating by the EEC circuit of a corresponding set of FCC bits; and
forming the plurality of code words each of one of the corresponding plurality of sets of user data and the corresponding set of ECC bits;

arranging by the controller circuit of the plurality of ECC code words into an ECC protected page of data, wherein when programmed on to a word line of the array the ECC protected page of data is written such that the FCC code words thereof are written in an interleaved manner in which memory cells storing a first of the ECC codes words are along a first set of bit lines and memory cells storing a second of the ECC cord words are alone a second set of bit lines, one or more of first set of bit lines being between bit lines of the second set of bit lines;
transferring the FCC protected page of data from the controller circuit to the memory circuit: and
writing the FCC protected page of data on to a first word line of the memory array, wherein the FCC protected page of data is written and read by the memory circuit as a single page.

2. The method of claim 1 , wherein one or more of the plurality of ECC code words is formed to have a higher degree of ECC capability than other ones of the plurality of the ECC code words.

3. The method of claim 2 , wherein the ECC code words formed to have higher degree of ECC capability have a larger number of parity bits than the other ones of the plurality of the ECC code words.

4. The method of claim 1 , wherein the bit lines of the array arc formed into a plurality of columns and the plurality of ECC code words are interleaved in memory cells corresponding to pairs of odd and even columns of the array.

5. The method of claim 1 , wherein the bit lines of the array are formed into a plurality of columns and the number of ECC code words of which the page of data is formed is N, where N is an integer three or greater, and the N ECC code words of the ECC protected page of data are written into every N-th column of the array

6. The method of claim 1 , wherein the sets of ECC bits generated by the ECC circuit are of a low-density parity-check (LDPC) type of code.

7. The method of claim 1 , wherein the array of memory cells is formed according to a NAND type of architecture.

8. The method of claim 1 , wherein the memory circuit stores data in a multi-state format storing more than one page on a word line.

Assignees

• Sandisk Technologies Inc

Inventors

• Tam Eugene Jinglun

Classifications

• G06F11/1076

  Parity data used in redundant arrays of independent storages, e.g. in RAID systems · CPC title

• G06F11/1008

  in individual solid state devices (G06F11/1004 takes precedence) · CPC title

• G06F11/1028

  Adjacent errors, e.g. error in n-bit (n>1) wide storage units, i.e. package error · CPC title

• G06F11/1012 Primary

  using codes or arrangements adapted for a specific type of error (G06F11/1048 takes precedence) · CPC title