Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Mask blank, method of manufacturing the same, and transfer mask
US9104112B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9104112-B2 |
| Application number | US-201113823206-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 29, 2011 |
| Priority date | Sep 30, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1 , a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
First claim
Opening claim text (preview).
The invention claimed is: 1. A mask blank comprising: a substrate; and a thin film which is formed on the substrate and which is for forming a transfer pattern and made of a material containing a metal, wherein the thin film has a surface modified layer comprising an oxide film containing a hydrocarbon. 2. The mask blank according to claim 1 , wherein the thin film is a laminated film and an uppermost layer of the laminated film is made of a material con…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9104112B2 cover?
- Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1 , a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a …
- Who is the assignee on this patent?
- Sakai Kazuya, Hashimoto Masahiro, Yamada Takeyuki, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification G03F1/50. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).