Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9103032B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9103032-B2 |
| Application number | US-201213672777-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 9, 2012 |
| Priority date | Nov 9, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.
Opening claim text (preview).
What is claimed is: 1. Apparatus for forming a solar cell, comprising: a housing defining a chamber including a rotatable substrate support therein and an outer structure located radially outward from the substrate support; a sputtering source, configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support; an evaporation source configured to deposit a plurality of particles of a second type over the portion of the…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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