Apparatus and method of forming an indium gallium zinc oxide layer
US-9214340-B2 · Dec 15, 2015 · US
Method for forming metal oxide film, metal oxide film, and apparatus for forming metal oxide film
US9103028B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9103028-B2 |
| Application number | US-200913265193-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 20, 2009 |
| Priority date | Apr 20, 2009 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution ( 4 ) containing a metallic element and ammonia ( 4 a ) is formed into a mist. Meanwhile, a substrate ( 2 ) is heated. Then, the solution ( 4 ) formed into a mist is supplied onto a first main surface of the substrate ( 2 ) being heated.
First claim
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The invention claimed is: 1. A method for forming a metal oxide film, the method comprising: (A) forming a solution comprising a metallic element and ammonia into a mist; (B) heating a substrate, wherein the heating temperature is maintained at 300° C. or less; and (C) supplying the mist from (A) onto a first main surface of the substrate from (B) to form a metal oxide film, wherein the metal oxide film is a n-type semiconductor. 2. The method of claim…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/407Primary
Chemistry & Metallurgy · mapped topic
- C23C16/40Primary
Chemistry & Metallurgy · mapped topic
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- What does patent US9103028B2 cover?
- The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution ( 4 ) containing a metallic element and ammonia ( 4 a ) is formed into a mist. Meanwhile, a substrate ( 2 ) is…
- Who is the assignee on this patent?
- Orita Hiroyuki, Shirahata Takahiro, Yoshida Akio, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/407. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).