Magnetron sputtering apparatus and method of manufacturing semiconductor device

US9103025B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9103025-B2
Application numberUS-85913807-A
CountryUS
Kind codeB2
Filing dateSep 21, 2007
Priority dateSep 22, 2006
Publication dateAug 11, 2015
Grant dateAug 11, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.

First claim

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What is claimed is: 1. A magnetron sputtering apparatus comprising: a vacuum chamber; a target and a substrate holder, which are disposed to face one another in the vacuum chamber; a magnetron disposed on the target side which is opposite to where the substrate holder is disposed; and a rotating mechanism designed to rotate the magnetron about an axis perpendicular to a face of the target; wherein the magnetron comprises an outer frame magnet and an inner frame magnet prov…

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What does patent US9103025B2 cover?
A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed o…
Who is the assignee on this patent?
Iyanagi Katsumi, Matsunaka Shigeki, Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification C23C14/35. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).