Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
US-9219202-B2 · Dec 22, 2015 · US
US9102875B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9102875-B2 |
| Application number | US-201414446175-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2014 |
| Priority date | Dec 1, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Disclosed herein are emissive ceramic materials having a dopant concentration gradient along a thickness of a yttrium aluminum garnet (YAG) region. The dopant concentration gradient may include a maximum dopant concentration, a half-maximum dopant concentration, and a slope at or near the half-maximum dopant concentration. The emissive ceramics may, in some embodiments, exhibit high internal quantum efficiencies (IQE). The emissive ceramics may, in some embodiments, include porous regions. Also disclosed herein are methods of make the emissive ceramic by sintering an assembly having doped and non-doped layers.
Opening claim text (preview).
What is claimed is: 1. An emissive ceramic comprising a yttrium aluminum garnet (YAG) region and a dopant having a concentration gradient along a thickness of the YAG region between a first surface and a second surface, wherein said concentration gradient comprises a maximum dopant concentration, a first half-maximum dopant concentration, and a first slope at or near the first half-maximum dopant concentration, wherein an absolute value of the first slope is in the range of about 0…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
Cross-Sectional Technologies · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.