Method of ONO integration into logic CMOS flow

Patent metadata

Field	Value
Publication number	US-9102522-B2
Application number	US-201213434347-A
Country	US
Kind code	B2
Filing date	Mar 29, 2012
Priority date	Apr 24, 2009
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer.

First claim

What is claimed is:

1. A method comprising:
forming above a surface on a substrate a stack of gate layers including at least two dielectric layers separated by at least one gate layer;
forming a non-volatile memory device in a first region of the stack of gate layers comprising:
forming a first opening extending from a top surface of the stack of gate layers to a lower surface of the stack of gate layers;
sequentially forming on sidewalls of the first opening a blocking diele…

Assignees

• Ramkumar Krishnaswamy
• Jin Bo
• Jenne Fredrick
• Cypress Semiconductor Corp

Inventors

• Ramkumar Krishnaswamy
• Jin Bo
• Jenne Fredrick

Classifications

• H10P50/283

  Electricity · mapped topic

• H10P50/266

  Electricity · mapped topic

• H10D84/0193

  Electricity · mapped topic

• H10D84/0158

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic