Semiconductor devices and methods of forming thereof

Patent metadata

Field	Value
Publication number	US-9102519-B2
Application number	US-201313804934-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 14, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

First claim

What is claimed is:

1. A method of forming a semiconductor device, the method comprising:
forming a sacrificial layer in and over a first surface of a workpiece having the first surface and an opposite second surface by a local oxidation process, the sacrificial layer extending into the workpiece;
forming a membrane over the sacrificial layer;
forming a through hole through the workpiece from the second surface to expose a surface of the sacrificial layer; and
removing at le…

Assignees

• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Ahrens Carsten
• Barzen Stefan
• Friza Wolfgang

Classifications

• B81B3/001

  Operations & Transport · mapped topic

• B81C2201/017

  Operations & Transport · mapped topic

• B81C1/00404

  Operations & Transport · mapped topic

• B81B2203/0127

  Operations & Transport · mapped topic

• B81C1/00984 Primary

  Operations & Transport · mapped topic