Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Substrates and methods of forming a pattern on a substrate
US9102121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9102121-B2 |
| Application number | US-201213463468-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 3, 2012 |
| Priority date | May 3, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of forming a pattern on a substrate, the pattern comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising: forming a pattern-interrupting region mask elevationally over underlying substrate material, the pattern-interrupting region mask comprising masking material, the masking material of the pattern-interrupting region mask forming a raised masking feature within the pattern-…
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Classifications
- H10P76/4085Primary
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Cross-Sectional Technologies · mapped topic
- B32B3/30Primary
Operations & Transport · mapped topic
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- What does patent US9102121B2 cover?
- Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pa…
- Who is the assignee on this patent?
- Sipani Vishal, Kewley David A, Armstrong Kyle, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).