Transducer resistor shunt structure for low-cost probing
US-2015380027-A1 · Dec 31, 2015 · US
Method of etching a magnesium oxide film
US9099643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099643-B2 |
| Application number | US-201313777352-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2013 |
| Priority date | Feb 26, 2013 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a magnetoresistive device, the magnetoresistive device including: a first electrode and a second electrode located at a distance from each other; a magnetoresistive element including a metal layer and disposed between the first electrode and the second electrode; and an insulating portion in contact with the magnetoresistive element, wherein the magnetoresistive element has a first surface in contact with the first electrode, a seco…
Assignees
Inventors
Classifications
Physics · mapped topic
Physics · mapped topic
- G11B5/3909Primary
Physics · mapped topic
- H01L43/12Primary
Electricity · mapped topic
Physics · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9099643B2 cover?
- A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magne…
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification G11B5/3909. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).