Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells
US-2024380401-A1 · Nov 14, 2024 · US
US9099641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099641-B2 |
| Application number | US-201314073671-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2013 |
| Priority date | Nov 6, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when subject to a potential difference, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, compared to the strength of the magnetic anisotropy along the first easy axis, is magnified during the application of the potential difference, where the extent of the magnification is enhanced by the presence of the additional layer.
Opening claim text (preview).
What is claimed is: 1. A magnetoelectric junction comprising: a ferromagnetic fixed layer; a ferromagnetic free layer that is magnetically anisotropic; a first dielectric layer interposed between the ferromagnetic fixed layer and the ferromagnetic free layer; and a second dielectric layer disposed proximate the ferromagnetic free layer; wherein the ferromagnetic fixed layer is magnetically polarized in a first direction; wherein the ferromagnetic free layer has a first ea…
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Electricity · mapped topic
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