Systems and methods for implementing magnetoelectric junctions having improved read-write characteristics

US9099641B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9099641-B2
Application numberUS-201314073671-A
CountryUS
Kind codeB2
Filing dateNov 6, 2013
Priority dateNov 6, 2012
Publication dateAug 4, 2015
Grant dateAug 4, 2015

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Abstract

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Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when subject to a potential difference, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, compared to the strength of the magnetic anisotropy along the first easy axis, is magnified during the application of the potential difference, where the extent of the magnification is enhanced by the presence of the additional layer.

First claim

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What is claimed is: 1. A magnetoelectric junction comprising: a ferromagnetic fixed layer; a ferromagnetic free layer that is magnetically anisotropic; a first dielectric layer interposed between the ferromagnetic fixed layer and the ferromagnetic free layer; and a second dielectric layer disposed proximate the ferromagnetic free layer; wherein the ferromagnetic fixed layer is magnetically polarized in a first direction; wherein the ferromagnetic free layer has a first ea…

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What does patent US9099641B2 cover?
Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axi…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification G11C11/161. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).