Semiconductor device and production method for semiconductor device
US-2015014742-A1 · Jan 15, 2015 · US
Insulated gate bipolar transistor
US9099520B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099520-B2 |
| Application number | US-201414154790-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2014 |
| Priority date | Jul 14, 2011 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
Official abstract text for this publication.
An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel exits between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrode. An enhancement layer separates the base layer from the drift layer in a plane parallel to the emitter side. A grounded gate electrode includes a second, grounded trench gate electrode and an electrically conducting layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An insulated gate bipolar transistor having layers between an emitter electrode on an emitter side and a collector electrode on a collector side opposite to the emitter side, the insulated gate bipolar transistor comprising: a lowly doped drift layer of a first conductivity type; a collector layer of a second conductivity type different than the first conductivity type, the collector layer being arranged between the drift layer and the collector electrode…
Assignees
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Classifications
Electricity · mapped topic
- H10D64/117Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D62/127Primary
Electricity · mapped topic
- H10D12/481Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9099520B2 cover?
- An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from …
- Who is the assignee on this patent?
- Abb Technology Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D64/117. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).