Semiconductor device
US-2015380400-A1 · Dec 31, 2015 · US
Zener diode devices and related fabrication methods
US9099487B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099487-B2 |
| Application number | US-201314098194-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 5, 2013 |
| Priority date | Dec 5, 2013 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configured to influence a first reverse breakdown voltage of a junction between the first region and the second region. The second Zener diode structure includes a fourth region, a fifth region that is adjacent to the fourth region, and a sixth region adjacent to the fourth region and the fifth region to provide a junction configured to influence a second reverse breakdown voltage of a junction between the fourth region and the fifth region, wherein the second reverse breakdown voltage and the first reverse breakdown voltage are different.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate; a first Zener diode structure on the semiconductor substrate, the first Zener diode structure including: a first region having a first conductivity type and a first dopant concentration; a second region having a second conductivity type and a second dopant concentration, the second region being adjacent to the first region to provide a vertical junction between the first region and the second…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9099487B2 cover?
- Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configu…
- Who is the assignee on this patent?
- Chen Weize, Lin Xin, Parris Patrice M, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D8/25. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).