Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US9099482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099482-B2 |
| Application number | US-201414323329-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2014 |
| Priority date | Jul 16, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Official abstract text for this publication.
Methods of processing a device substrate are disclosed herein. In one embodiment, a method of processing a device substrate can include bonding a first surface of a device substrate to a carrier with a polymeric material. The device substrate may have a plurality of first openings extending from the first surface towards a second surface of the device substrate opposite from the first surface. Then, material can be removed at the second surface of the device substrate, wherein at least some of the first openings communicate with the second surface at least one of before or after performing the removal of the material. Then, at least a portion of the polymeric material disposed between the first surface and the carrier substrate can be exposed to a substance through at least some first openings to debond the device substrate from the carrier substrate.
Opening claim text (preview).
The invention claimed is: 1. A method of processing a device substrate, comprising: a) bonding a first surface of a device substrate to a carrier with a polymeric material or a dielectric material, wherein the device substrate has a plurality of integral portions which are bounded at edges of each integral portion at dicing lanes of the device substrate, wherein the integral portions are configured to be separated from one another by severing the device substrate along the dicing…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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