Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
High speed gallium nitride transistor devices
US9099433B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099433-B2 |
| Application number | US-201213453127-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 23, 2012 |
| Priority date | Apr 23, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
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A low leakage current switch device ( 110 ) is provided which includes a GaN-on-Si substrate ( 11 - 13 ) covered by a passivation surface layer ( 43 ) in which a T-gate electrode with sidewall extensions ( 48 ) is formed and coated with a conformal passivation layer ( 49 ) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer ( 43 ) by the conformal passivation layer ( 49 ).
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming gallium nitride transistor, comprising: providing a substrate with a gallium nitride layer covered by a passivation surface layer; forming a mask with a first mask opening overlying the passivation surface layer; etching the passivation surface layer using the first mask opening in the mask to expose a gate contact surface of the substrate under the first mask opening; forming a conductive gate electrode comprising a contact base po…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9099433B2 cover?
- A low leakage current switch device ( 110 ) is provided which includes a GaN-on-Si substrate ( 11 - 13 ) covered by a passivation surface layer ( 43 ) in which a T-gate electrode with sidewall extensions ( 48 ) is formed and coated with a conformal passivation layer ( 49 ) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer ( 43 ) by t…
- Who is the assignee on this patent?
- Green Bruce M, Moore Karen E, Hartin Olin, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/4755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).