Selective laser anneal on semiconductor material

Patent metadata

Field	Value
Publication number	US-9099412-B2
Application number	US-201313922424-A
Country	US
Kind code	B2
Filing date	Jun 20, 2013
Priority date	Jun 20, 2013
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

A method of forming a semiconductor device including providing a substrate having a first region of a first semiconductor material and a second region of a second semiconductor material and forming a first gate structure in a first region of the semiconductor material and a second gate structure in a second region of the substrate. A first source region and a first drain region is implanted in the first region of the substrate. The dopant for the first source region and the first drain region is not implanted into the second region. The first source region and the first drain region are then activated with a laser anneal. A second source region and a second drain region are implanted in the second region of the substrate after activating the first source region and the first drain region. The second source region and the first source region may then be activated.

First claim

What is claimed is:

1. A method of forming a semiconductor device comprising:
providing a substrate having a first region of a first semiconductor material and a second region of a second semiconductor material, wherein a topmost surface of said first region of the first semiconductor material and a topmost surface of said second region of the second semiconductor material are coplanar;
forming a first gate structure in the first region of the substrate and a second gate structu…

Assignees

• IBM

Inventors

• Leobandung Effendi

Classifications

• H10P30/225

  Electricity · mapped topic

• H10P34/42

  Electricity · mapped topic

• H10P95/90 Primary

  Electricity · mapped topic

• H10D64/017

  Electricity · mapped topic

• H10D86/011

  Electricity · mapped topic