Chip packaging method, chip packaging module, and embedded substrate chip packaging structure
US-2024413138-A1 · Dec 12, 2024 · US
US9099397B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9099397-B1 |
| Application number | US-201213427097-A |
| Country | US |
| Kind code | B1 |
| Filing date | Mar 22, 2012 |
| Priority date | Mar 22, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Official abstract text for this publication.
A transistor includes a first emitter layer area, a second emitter layer area, wherein the second emitter layer area is separate from the first emitter layer area, a first metal formed on the first emitter layer area, a second metal formed on the second emitter layer area, a base, and a base metal formed on the base and on the second metal. The first emitter layer area is an emitter of the transistor and the first metal provides an emitter contact. The base metal on the base and on the second metal provides a base contact.
Opening claim text (preview).
What is claimed is: 1. A method of forming a self aligned base contact for a transistor, the method comprising: forming a collector layer on a substrate; forming a base layer on the collector layer; forming an emitter layer on the base layer; forming a first metal on a first emitter area of the emitter layer of the transistor; forming a second metal on a second emitter area of the emitter layer of the transistor, wherein the first metal and the second metal are not in dire…
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