Selective gallium nitride regrowth on (100) silicon

Patent metadata

Field	Value
Publication number	US-9099381-B2
Application number	US-201213677997-A
Country	US
Kind code	B2
Filing date	Nov 15, 2012
Priority date	Nov 15, 2012
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

A method for selective formation of a gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure.

First claim

What is claimed is:

1. A method for selectively forming a gallium nitride material on a silicon substrate, said method comprising:
forming a blanket layer of dielectric material on an uppermost surface of a (100) silicon substrate;
patterning said blanket layer of dielectric material forming a plurality of patterned dielectric material structures on portions of the uppermost surface of the (100) silicon substrate and exposing other portions of the uppermost surface of the (100)…

Assignees

• IBM

Inventors

• Bayram Can
• Cheng Cheng-Wei
• Sadana Devendra K
• Shiu Kuen-Ting

Classifications

• H10P14/3416

  Electricity · mapped topic

• H10P14/3216

  Electricity · mapped topic

• H10P14/2926

  Electricity · mapped topic

• H10P14/2925

  Electricity · mapped topic

• H10P14/2905

  Electricity · mapped topic