Semiconductor device

Patent metadata

Field	Value
Publication number	US-9099362-B2
Application number	US-201213544513-A
Country	US
Kind code	B2
Filing date	Jul 9, 2012
Priority date	Nov 9, 2000
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.

First claim

What is claimed is:

1. A semiconductor device comprising:
a driver circuit comprising:
a first channel region;
a second channel region;
a third channel region adjacent to the first and the second channel region;
a fourth channel region adjacent to the first and the second channel region;
a fifth channel region;
a first gate electrode overlapping with the first channel region and the second channel region, wherein the first gate electrode includes a first slit overlappi…

Assignees

• Koyama Jun
• Semiconductor Energy Lab

Inventors

• Koyama Jun

Classifications

• H10D86/0225

  Electricity · mapped topic

• H10D30/6715

  Electricity · mapped topic

• H10D62/40

  Electricity · mapped topic

• H10D30/6745

  Electricity · mapped topic

• H10D30/6733

  Electricity · mapped topic