Semiconductor device including two-dimensional material and method of fabricating the same
US-2024170562-A1 · May 23, 2024 · US
Display device and manufacturing method thereof
US9099360B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099360-B2 |
| Application number | US-201414334525-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 17, 2014 |
| Priority date | Oct 29, 2013 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the etch stop layer. The passivation layer is formed on the first electrode, the first output electrode and the third control electrode. The pixel electrode is formed on the passivation layer and connects to the first output electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A display device comprising a plurality of thin film transistor (TFTs), each TFT comprising: a first control electrode formed on a substrate; a semiconductor layer formed on the first control electrode; an etch stop layer formed on the semiconductor layer; a first input electrode and a first output electrode formed on the semiconductor layer, wherein the etch stop layer does not contact the first input and first output electrodes; a third control ele…
Assignees
Inventors
Classifications
- H10D30/6704Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D86/60Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9099360B2 cover?
- A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the et…
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6704. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).