Method of manufacturing silicon carbide semiconductor power device
US-2024021478-A1 · Jan 18, 2024 · US
Transistor and method for manufacturing same
US9099342B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099342-B2 |
| Application number | US-201514661158-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2015 |
| Priority date | Jul 31, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
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According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a transistor, comprising: forming a first semiconductor region of a first conductivity type having a second region and a first region provided on the second region, the first semiconductor region including a compound semiconductor having a first element and a second element; forming a second semiconductor region of a second conductivity type deeper than a lower end of the first region by implanting impurity of the second conducti…
Assignees
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Classifications
Electricity · mapped topic
- H10D12/031Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9099342B2 cover?
- According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The se…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D12/031. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).