Semiconductor device
US-8970020-B2 · Mar 3, 2015 · US
US9099331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099331-B2 |
| Application number | US-201414585334-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2014 |
| Priority date | Sep 30, 2011 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Official abstract text for this publication.
Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package ( 4 ) includes a die pad ( 61 ), a source lead ( 63 ), a first MOSFET ( 11 ), and a first Schottky barrier diode ( 21 ). A source electrode ( 11 S ) of the first MOSFET ( 11 ), an anode electrode ( 21 A ) of the first Schottky barrier diode ( 21 ), and the source lead ( 63 ) are electrically connected by the bonding wire ( 31 ), one end of which is bonded to the source electrode ( 11 S ) of the first MOSFET ( 11 ), the other end of which is bonded to the source lead ( 63 ), and the center of which is bonded to the anode electrode ( 21 A ) of the first Schottky barrier diode ( 21 ).
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device, comprising: a die pad; a SiC-MOSFET die-bonded to a surface of the die pad, the SiC-MOSFET having a first electrode pad on a surface opposite to a die-bonded surface; a Schottky barrier diode die-bonded to the surface of the die pad, the Schottky barrier diode having a second electrode pad to be connected electrically to the first electrode pad on a surface opposite to a die-bonded surface; a conductive member disposed lat…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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