Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9099323-B2
Application number	US-201113244054-A
Country	US
Kind code	B2
Filing date	Sep 23, 2011
Priority date	Jun 9, 2011
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

A Si-on-half-insulator device and its manufacturing method are disclosed in this invention. In one embodiment, a horizontal insulating layer located below at least one of the source and drain regions is realized to reduce junction capacitance. In another embodiment, a horizontal insulating layer located below at least one of the source and drain regions and a vertical insulating layer located below at least one side surface of the gate are realized. The additional vertical insulating layer can reduce punch leakage. Further, a method of manufacturing the above semiconductor device is also disclosed, wherein the horizontal and vertical insulating layers are formed using an additional layer of epitaxially grown semiconductor material and isolating trenches.

First claim

The invention claimed is:

1. A method of manufacturing semiconductor device, comprising the following steps:
providing a substrate of a first semiconductor material, forming a protrusion with an expected height on the substrate, and providing a cap-shaped mask covering the top and sidewalls of the protrusion;
growing a layer of second semiconductor material on the surfaces of the substrate at opposite sides of the protrusion;
removing a portion of the cap-shaped mask to expose…

Assignees

• Liu Jinhua
• Semiconductor Mfg Int Beijing

Inventors

• Liu Jinhua

Classifications

• H10W10/181

  Electricity · mapped topic

• H10W10/061

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014

  Electricity · mapped topic

• H10P90/1906

  Electricity · mapped topic