Method of manufacturing magnetoresistive element

Patent metadata

Field	Value
Publication number	US-9097754-B2
Application number	US-201313748665-A
Country	US
Kind code	B2
Filing date	Jan 24, 2013
Priority date	Oct 31, 2012
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

First claim

What is claimed is:

1. A method for manufacturing a magnetoresistive element comprising the steps of:
forming a second magnetic layer over a substrate;
forming a barrier layer that is an insulating layer, which is a Ta-containing insulating layer in which MgO and Ta are mixed, on the second magnetic layer by sputtering an insulating material target and a Ta-containing material target;
forming a first magnetic layer on the barrier layer; and
processing the first magnetic layer by plasma etching,
wherein a content ratio of a Ta element to the barrier layer is in a range in which
an MR ratio is 150% or more,
MR ratio={(Rap−Rp)/Rp}×100(%) where Rp is electric resistance between the first magnetic layer and the second magnetic layer when magnetization directions of the first magnetic layer and the second magnetic layer are parallel with each other and Rap is the electric resistance between the first magnetic layer and the second magnetic layer when the magnetization directions of the first magnetic layer and the second magnetic layer are antiparallel with each other.

2. The method for manufacturing a magnetoresistive element according to claim 1 , wherein the insulating material target is a MgO target, an AlO target, or a MgAlO target.

3. The method for manufacturing a magnetoresistive element according to claim 1 ,
wherein the first magnetic layer is a free layer of which the magnetization direction is inverted by external magnetic field or spin injection, and
the second magnetic layer is a fixed layer of which the magnetization direction is not inverted by external magnetic field or spin injection.

4. The method for manufacturing a magnetoresistive element according to claim 1 , wherein a content ratio of the Ta element to the Ta-containing insulating layer ranges from 5.1 vol % to 75.2 vol %.

5. The method for manufacturing a magnetoresistive element according to claim 1 , wherein the Ta-containing insulating layer is an insulating layer represented by (MgO) 100-x Ta x .

6. The method for manufacturing a magnetoresistive element according to claim 1 , wherein the barrier layer includes a plurality of laminated insulating films.

7. The method for manufacturing a magnetoresistive element according to claim 1 , wherein a thickness of the barrier layer has a finite value less than 3 nm.

8. The method for manufacturing a magnetoresistive element according to claim 1 , wherein in the processing of the first magnetic layer by the plasma etching, any one of NH3 gas, CO gas, the mixed gas of NH3 gas and CO gas, and CH3OH gas is used.

9. The method for manufacturing a magnetoresistive element according to claim 1 , wherein the Ta-containing insulating layer is formed by sputtering a target comprising MgO and a target comprising Ta.

10. The method for manufacturing a magnetoresistive element according to claim 1 , wherein the first magnetic layer comprises CoFeB, and the Ta-containing insulating layer is represented by (MgO) 100-x Ta x .

11. A method for manufacturing a magnetoresistive element comprising the steps of:
forming a second magnetic layer over a substrate;
forming a barrier layer that is an insulating layer including a Ta element or a Ti element on the second magnetic layer by sputtering an insulating material target, and a Ta-containing material target or a Ti-containing material target;
forming a first magnetic layer on the barrier layer; and
processing the first magnetic layer by plasma etching,
wherein a content ratio of the Ta element or the Ti element to the barrier layer is in a range in which
an MR ration is 150% or more,
MR ratio={(Rap−Rp)/Rp}×100(%) where Rp is electric resistance between the first magnetic layer and the second magnetic layer when magnetization directions of the first magnetic layer and the second magnetic layer are parallel with each other and Rap is the electric resistance between the first magnetic layer and the second magnetic layer when the magnetization directions of the first magnetic layer and the second magnetic layer are antiparallel with each other.

Assignees

• Hitachi High Tech Corp

Inventors

• Satake Makoto
• Hayakawa Jun
• Tetsuka Tsutomu
• Shimada Takeshi
• Yamamoto Naohiro
• Yoshida Atsushi

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P50/287

  by chemical means · CPC title

• G01R33/09

  Magnetoresistive devices · CPC title

• H01J37/32192

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title