Backplane for flat panel display apparatus, method of manufacturing the backplane, and organic light emitting display apparatus including the backplane

Patent metadata

Field	Value
Publication number	US-9093572-B2
Application number	US-201213705152-A
Country	US
Kind code	B2
Filing date	Dec 4, 2012
Priority date	Apr 12, 2012
Publication date	Jul 28, 2015
Grant date	Jul 28, 2015

Abstract

A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.

First claim

What is claimed is:

1. A backplane for a flat panel display apparatus, the backplane comprising:
a thin film transistor (TFT) on a substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode;
a light-blocking layer between the substrate and the TFT;
a first insulating layer between the light-blocking layer and the TFT;
a capacitor comprising a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode, and wherein the first insulating layer is between the first electrode and the light-blocking layer; and
a pixel electrode on the same plane as the light-blocking layer, the pixel electrode coplanar with and having substantially the same thickness as the light-blocking layer.

2. The backplane of claim 1 , wherein the active layer comprises oxygen (O) and at least one element selected from the group consisting of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn).

3. The backplane of claim 1 , wherein both the first electrode of the capacitor and the pixel electrode comprise the same material as the light-blocking layer.

4. The backplane of claim 1 , wherein the light-blocking layer comprises a material that has a smaller light transmission ratio than that of the active layer.

5. The backplane of claim 1 , further comprising a second insulating layer between the active layer and the gate electrode, wherein the first insulating layer has a higher dielectric constant than that of the second insulating layer.

6. The backplane of claim 5 , wherein the second electrode of the capacitor is formed on the same plane as the active layer, and the second insulating layer is on the second electrode.

7. The backplane of claim 5 , wherein the second electrode of the capacitor is formed on the same plane as the active layer, and etched surfaces of the second insulating layer and the gate electrode are flush with each other.

8. The backplane of claim 7 , further comprising a metal oxide layer on the gate electrode, wherein the metal oxide layer extends to cover the second electrode.

9. The backplane of claim 8 , wherein the second electrode of the capacitor is formed on the same plane as the active layer, and the metal oxide layer is on the second electrode.

10. The backplane of claim 1 , further comprising an alignment key on the same plane as the light-blocking layer.

11. The backplane of claim 10 , wherein the alignment key comprises the same material as the light-blocking layer.

12. The backplane of claim 1 , further comprising a third electrode of the capacitor which is on the same plane as the source electrode and the drain electrode.

13. An organic light-emitting display apparatus comprising:
a thin film transistor (TFT) on a substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode;
a light-blocking layer between the substrate and the TFT;
a first insulating layer between the light-blocking layer and the TFT;
a capacitor comprising a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode, and wherein the first insulating layer is between the first electrode and the light-blocking layer;
a pixel electrode on the same plane as the light-blocking layer, the pixel electrode coplanar with and having substantially the same thickness as the light-blocking layer;
an opposite electrode on the pixel electrode; and
an organic emission layer between the pixel electrode and the opposite electrode.

14. The organic light-emitting display apparatus of claim 13 , wherein the active layer comprises oxygen (O) and at least one element selected from the group consisting of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn).

15. The organic light-emitting display apparatus of claim 13 , wherein both the first electrode of the capacitor and the pixel electrode comprise the same material.

16. The organic light-emitting display apparatus of claim 13 , further comprising a second insulating layer between the active layer and the gate electrode, and the first insulating layer has a higher dielectric constant than that of the second insulating layer.

17. The organic light-emitting display apparatus of claim 13 , wherein the pixel electrode comprises a semi-transmissive metal layer.

18. The organic light-emitting display apparatus of claim 13 , wherein the opposite electrode is a reflective electrode.

Assignees

• Samsung Display Co Ltd

Inventors

• Kwon Do-Hyun
• Lee Il-Jung
• Im Choong-Youl
• Ko Moo-Soon
• Yoon Ju-Won
• Woo Min-Woo

Classifications

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• H10K59/124

  Insulating layers formed between TFT elements and OLED elements · CPC title

• H10K59/1213

  the pixel elements being TFTs · CPC title

• H10H20/062

  Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title