MEMS pressure transducer assembly

US9090455B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9090455-B2
Application numberUS-201414450870-A
CountryUS
Kind codeB2
Filing dateAug 4, 2014
Priority dateFeb 21, 2012
Publication dateJul 28, 2015
Grant dateJul 28, 2015

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An assembly ( 20 ) includes a MEMS die ( 22 ) having a pressure transducer device ( 40 ) formed on a substrate ( 44 ) and a cap layer ( 38 ). A packaging process ( 74 ) entails forming the device ( 40 ) on the substrate, creating an aperture ( 70 ) through a back side ( 58 ) of the substrate underlying a diaphragm ( 46 ) of the device ( 40 ), and coupling a cap layer ( 38 ) to the front side of the substrate overlying the device. A trench ( 54 ) is produced extending through both the cap layer and the substrate, and the trench surrounds a cantilevered platform ( 48 ) at which the diaphragm resides. The MEMS die is suspended above a substrate ( 26 ) so that a clearance space ( 60 ) is formed between the cantilevered platform and the substrate. The diaphragm is exposed to an external environment ( 68 ) via the aperture, the clearance space, and an external port.

First claim

Opening claim text (preview).

What is claimed is: 1. An assembly comprising: a device structure having a cantilevered platform formed therein, wherein a trench extends through said device structure surrounding said cantilevered platform; a microelectromechanical systems (MEMS) device formed at a front side of said device structure, said MEMS device having an active region residing on said cantilevered platform, and an aperture extends through said device structure underlying said active region of said MEMS d…

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What does patent US9090455B2 cover?
An assembly ( 20 ) includes a MEMS die ( 22 ) having a pressure transducer device ( 40 ) formed on a substrate ( 44 ) and a cap layer ( 38 ). A packaging process ( 74 ) entails forming the device ( 40 ) on the substrate, creating an aperture ( 70 ) through a back side ( 58 ) of the substrate underlying a diaphragm ( 46 ) of the device ( 40 ), and coupling a cap layer ( 38 ) to the front side of…
Who is the assignee on this patent?
Freescale Semiconductor Inc, Freescale Semiconductor Inc
What technology area does this patent fall under?
Primary CPC classification B81B7/0048. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jul 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).