Uniformity tuning capable ESC grounding kit for RF PVD chamber

Patent metadata

Field	Value
Publication number	US-9087679-B2
Application number	US-201213365876-A
Country	US
Kind code	B2
Filing date	Feb 3, 2012
Priority date	Feb 9, 2011
Publication date	Jul 21, 2015
Grant date	Jul 21, 2015

Abstract

Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

First claim

What is claimed is:

1. A processing chamber, comprising:
a chamber body;
a target disposed on the chamber body;
an RF power feed coupled to the target in a position that produces an RF power delivery asymmetry;
a substrate support electrically coupled the chamber body, the substrate support moveable between raised and lowered positions;
a shield surrounding the target and the substrate support; and
a grounding kit coupled to and moveable with the substrate support; the g…

Assignees

• Rasheed Muhammad M
• Wang Rongjun
• Nguyen Thanh X
• Ritchie Alan A
• Applied Materials Inc

Inventors

• Rasheed Muhammad M
• Wang Rongjun
• Nguyen Thanh X
• Ritchie Alan A

Classifications

• H01J37/34 Primary

  Electricity · mapped topic

• H01J37/32082 Primary

  Electricity · mapped topic

• H01J37/3441

  Electricity · mapped topic