Capacitive element, capacitor array, and A/D converter

US9083371B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9083371-B2
Application numberUS-201314066291-A
CountryUS
Kind codeB2
Filing dateOct 29, 2013
Priority dateDec 17, 2012
Publication dateJul 14, 2015
Grant dateJul 14, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A capacitive element includes first electrodes and second electrodes that are alternately arranged in a concentric form. Each of the first electrodes and the second electrodes is formed with closed loop form, in at least one wiring layer provided on or above a substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. A capacitive element comprising: a first terminal; a second terminal; first electrodes and second electrodes that are alternately arranged in a concentric form in a plurality of wiring layers provided on or above a substrate, each of the first electrodes and the second electrodes being formed with closed loop form, wherein the first electrodes and the second electrodes are formed in corresponding positions in the plurality of wiring layers, the first electrodes and the second electrodes are both connected to one of the first terminal and the second terminal in a first wiring layer of the plurality of wiring layers, the first wiring layer being an undermost wiring layer at a substrate side among the plurality of wiring layers, and the first electrodes and the second electrodes are connected to the first terminal and the second terminal, respectively, in a second wiring layer of the plurality of wiring layers, the second wiring layer being above the first wiring layer, each of the first electrodes and a corresponding one of the second electrodes that is adjacent to the each of the first electrodes being capacitively coupled in the second wiring layer to form a capacitor. 2. The capacitive element according to claim 1 , wherein the first wiring layer is a polysilicon layer formed above the substrate and polysilicon electrodes of transistors formed on the substrate are used as the first electrodes and the second electrodes in the first wiring layer. 3. The capacitive element according to claim 1 , the capacitive element comprising: an impurity region formed in the substrate under the first wiring layer and including a silicidated region to which one of the first terminal and the second terminal is connected. 4. The capacitive element according to claim 1 , wherein a fixed potential is applied at least to an outermost electrode among the first electrodes and the second electrodes alternately arranged in the concentric form. 5. The capacitive element according to claim 1 , wherein the concentric form is a concentric circular form or a concentric polygon form. 6. The capacitive element according to claim 1 , wherein the first electrodes and the second electrodes are formed in a copper wiring process. 7. The capacitive element according to claim 1 , wherein each of the first electrodes and the second electrodes includes no end. 8. A capacitor array including a plurality of unit capacitors arranged in an array form, and defining the number of the unit capacitors used as each of a plurality of capacitive elements in accordance with a relative ratio of capacitance values of the plurality of capacitive elements, the capacitor array comprising: a first wiring layer which connects the plurality of capacitive elements to a common electrode; and a second wiring layer which connects the unit capacitors used for each of the plurality of capacitive elements, wherein each of the plurality of unit capacitors includes: a first terminal; a second terminal; first electrodes and second electrodes that are alternately arranged in a concentric form in a plurality of wiring layers provided on or above a substrate, each of the first electrodes and the second electrodes being formed with closed loop form, wherein the first electrodes and the second electrodes are formed in corresponding positions in the plurality of wiring layers, the first electrodes and the second electrodes are both connected to one of the first terminal and the second terminal in a third wiring layer of the plurality of wiring layers, the third wiring layer being an undermost wiring layer at a substrate side among the plurality of wiring layers, and the first electrodes and the second electrodes are connected to the first terminal and the second terminal, respectively, in a fourth wiring layer of the plurality of wiring layers, the fourth wiring layer being above the third wiring layer, each of the first electrodes and a corresponding one of the second electrodes that is adjacent to the each of the first electrodes being capacitively coupled in the fourth wiring layer to form a capacitor. 9. The capacitor array according to claim 8 , wherein the unit capacitor arranged at an outermost circumference of the capacitor array is a dummy capacitor which is not used as a unit capacitor to be used for the plurality of capacitive elements. 10. The capacitor array according to claim 8 , wherein the unit capacitors arranged in distributed positions in the capacitor array are selected as the unit capacitors used for each of the plurality of capacitive elements. 11. The capacitor array according to claim 8 , wherein the first wiring layer is an undermost wiring layer at a substrate side, and the second wiring layer is an uppermost wiring layer above a substrate. 12. The capacitor array according to claim 8 , wherein a fixed potential is applied at least to an outermost electrode among the first electrodes and the second electrodes alternately arranged in the concentric form. 13. The capacitor array according to claim 8 , wherein the first electrodes and the second electrodes are formed in a copper wiring process. 14. The capacitor array according to claim 8 , wherein each of the first electrodes and the second electrodes includes no end. 15. An A/D converter comprising: a capacitor array including a plurality of unit capacitors arranged in an array form, and defining the number of the unit capacitors used as each of a plurality of capacitive elements in accordance with a relative ratio of capacitance values of the plurality of capacitive elements; a plurality of switches arranged at a periphery of the capacitor array and provided corresponding to the plurality of capacitive elements; and a comparator arranged at the periphery of the capacitor array and configured to compare input voltage with voltage corresponding to the capacitive elements selected by the plurality of switches, wherein analog-to-digital conversion of the input voltage is performed, and the capacitor array includes: a first wiring layer which connects the plurality of capacitive elements to a common electrode; and a second wiring layer which connects the unit capacitors used for each of the plurality of capacitive elements, wherein each of the plurality of unit capacitors includes: a first terminal; a second terminal; first electrodes and second electrodes that are alternately arranged in a concentric form in a plurality of wiring layers provided on or above a substrate, each of the first electrodes and the second electrodes being formed with closed loop form, wherein the first electrodes and the second electrodes are formed in corresponding positions in the plurality of wiring layers, the first electrodes and the second electrodes are both connected to one of the first terminal and the second terminal in a third wiring layer of the plurality of wiring layers, the third wiring layer being an undermost wiring layer at a substrate side among the plurality of wiring layers, and the first electrodes and the second electrodes are connected to the first terminal and the second terminal, respectively, in a fourth wiring layer of the plurality of wiring layers, the fourth wiring layer being above the third wiring layer, each of the first electrodes and a corresponding one of the second electrodes that is adjacent to the each of the first electrodes being capacitively coupled in the fourth wiring layer to form a capacitor. 16. The A/D converter according to claim 15 , wherein a fixed potential is applied at least t

Assignees

Inventors

Classifications

  • H03M1/12Primary

    Analogue/digital converters ({H03M1/001 – } H03M1/10 take precedence) · CPC title

  • H01G4/38Primary

    Multiple capacitors, i.e. structural combinations of fixed capacitors · CPC title

  • Form of non-self-supporting electrodes · CPC title

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Frequently asked questions

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What does patent US9083371B2 cover?
A capacitive element includes first electrodes and second electrodes that are alternately arranged in a concentric form. Each of the first electrodes and the second electrodes is formed with closed loop form, in at least one wiring layer provided on or above a substrate.
Who is the assignee on this patent?
Fujitsu Semiconductor Ltd, Socionext Inc
What technology area does this patent fall under?
Primary CPC classification H03M1/12. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 14 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).