Method for having laser light source in standby status

US9083151B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9083151-B2
Application numberUS-201113154705-A
CountryUS
Kind codeB2
Filing dateJun 7, 2011
Priority dateNov 10, 2005
Publication dateJul 14, 2015
Grant dateJul 14, 2015

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Abstract

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When the laser light source is caused to standby, the temperatures of semiconductor lasers are changed by approximately 3° C. from the temperature when the laser light source is always being used. With a temperature change of approximately 3° C., the wavelengths of the laser light generated by the semiconductor lasers change approximately 0.3 nm. This change hardly has any effect at all on optical fiber amplifiers, but the conversion efficiencies at the respective wavelength conversion elements of the wavelength conversion optical system change, and, particularly, deep ultraviolet light is hardly generated at all any longer. Therefore, even while the laser light has been made incident to the wavelength conversion optical system, there is no longer damaging of the wavelength conversion elements. Therefore, it is possible to provide a laser light source standby method that is able to shorten the start up time of the laser light source.

First claim

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The invention claimed is: 1. A laser light source standby method for a laser light source that uses optical fiber amplifiers to perform light amplification of laser light generated from semiconductor lasers and then forms deep ultraviolet light by means of a wavelength conversion optical system that uses a plurality of laser oscillating parts that are configured to form deep ultraviolet light, the method comprising: shifting, during standby, a relative relationship of a timing of…

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What does patent US9083151B2 cover?
When the laser light source is caused to standby, the temperatures of semiconductor lasers are changed by approximately 3° C. from the temperature when the laser light source is always being used. With a temperature change of approximately 3° C., the wavelengths of the laser light generated by the semiconductor lasers change approximately 0.3 nm. This change hardly has any effect at all on opti…
Who is the assignee on this patent?
Tokuhisa Akira, Takada Yasutoshi, Nikon Corp
What technology area does this patent fall under?
Primary CPC classification H01S3/2383. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 14 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).