Heat treatment method and heat treatment apparatus for heating substrate by emitting flashing light

Patent metadata

Field	Value
Publication number	US-9082728-B2
Application number	US-201113177696-A
Country	US
Kind code	B2
Filing date	Jul 7, 2011
Priority date	Jan 29, 2010
Publication date	Jul 14, 2015
Grant date	Jul 14, 2015

Abstract

A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

First claim

What is claimed is:

1. A heat treatment method for heating a substrate by emitting light to the substrate, said heat treatment method comprising:
(a) performing a first flash heating step, to effect said heat treatment, including emitting from a flash lamp a flashing light to the substrate that has been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp, so that the flashing light causes the temperature of a surface of the substrate to reach 1000 degrees C. or higher; and
(b) performing a second flash heating step, further effective to obtain said heat treatment of said substrate, performed after said first flash heating step, including emitting from the flash lamp a second flashing light to the substrate after said substrate has been heated to a second preheating temperature higher than said first preheating temperature by a light emission from said halogen lamp, further comprising, after said second flash heating step, a step of emitting a light from said halogen lamp to thereby heat the substrate to a temperature equal to or higher than 1000 degrees C. that exceeds said second preheating temperature.

2. The heat treatment method according to claim 1 , wherein
said second preheating temperature is 700 degrees C. or higher,
in said second flash heating step, the temperature of the surface of the substrate is caused to reach 1100 degrees C. or higher by the emission of the flashing light from said flash lamp.

3. The heat treatment method according to claim 1 , further comprising,
emitting another flashing light from said flash lamp to the substrate, after said first flash heating step and prior to said second flash heating step.

4. The heat treatment method according to claim 1 , wherein
in a time period of at least two seconds immediately before said flash lamp emits the flashing light in each of said first flash heating step and said second flash heating step, said halogen lamp emits a light to thereby maintain the temperature of the substrate at a constant temperature.

5. The heat treatment method according to claim 1 , wherein
in a time period from said first flash heating step to said second flash heating step, the rate of a temperature rise in the substrate caused by said halogen lamp is 10 degrees C. per second or higher and 100 degrees C. per second or lower.

6. The heat treatment method according to claim 1 , wherein
in said first flash heating step and said second flash heating step, the emission of the flashing light from said flash lamp is implemented by producing an intermittent current flow through said flash lamp by using an insulated gate bipolar transistor.

7. A heat treatment method for heating a substrate by emitting light to the substrate, said heat treatment method comprising:
(a) performing a first flash heating step, to effect said heat treatment, including emitting from a flash lamp a flashing light to the substrate that has been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp, so that the flashing light causes the temperature of a surface of the substrate to reach 1000 degrees C. or higher; and
(b) performing a second flash heating step, further effective to obtain said heat treatment of said substrate, performed after said first flash heating step, including emitting from the flash lamp a second flashing light to the substrate after said substrate has been heated to a second preheating temperature higher than said first preheating temperature by a light emission from said halogen lamp, further comprising, after said second flash heating step, a step of emitting a light from said halogen lamp to thereby maintain the temperature of the substrate at 850 degrees C. or higher and 950 degrees C. or lower for a time period of one second or more and 30 seconds or less.

8. The heat treatment method according to claim 7 , wherein
said second preheating temperature is 700 degrees C. or higher,
in said second flash heating step, the temperature of the surface of the substrate is caused to reach 1100 degrees C. or higher by the emission of the flashing light from said flash lamp.

9. The heat treatment method according to claim 7 , further comprising,
emitting another flashing light from said flash lamp to the substrate, after said first flash heating step and prior to said second flash heating step.

10. The heat treatment method according to claim 7 , wherein
in a time period of at least two seconds immediately before said flash lamp emits the flashing light in each of said first flash heating step and said second flash heating step, said halogen lamp emits a light to thereby maintain the temperature of the substrate at a constant temperature.

11. The heat treatment method according to claim 7 , wherein
in a time period from said first flash heating step to said second flash heating step, the rate of a temperature rise in the substrate caused by said halogen lamp is 10 degrees C. per second or higher and 100 degrees C. per second or lower.

12. The heat treatment method according to claim 7 , wherein
in said first flash heating step and said second flash heating step, the emission of the flashing light from said flash lamp is implemented by producing an intermittent current flow through said flash lamp by using an insulated gate bipolar transistor.

13. A heat treatment apparatus for heating a substrate by emitting a light to the substrate, said heat treatment apparatus comprising:
a support part for supporting the substrate in point contact;
a halogen lamp for emitting a heat treating light to the substrate supported by said support part;
a flash lamp for emitting a flashing light to the substrate supported by said support part; and
a light-emission control part for controlling a light emission from said halogen lamp and said flash lamp, said light-emission control part being configured to control said halogen lamp and said flash lamp so as to perform a first flash heating in which said flash lamp emits the flashing light to the substrate having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from said halogen lamp, so that the temperature of a surface of the substrate reaches 1000 degrees C. or higher, and then perform a second flash heating in which said flash lamp emits the flashing light to the substrate having been heated to a second preheating temperature higher than said first preheating temperature by a light emission from said halogen lamp, wherein
said light-emission control part is configured to control said halogen lamp such that, after said second flash heating, said halogen lamp emits a light to thereby heat the substrate to a temperature equal to or higher than 1000 degrees C. that exceeds said second preheating temperature.

14. The heat treatment apparatus according to claim 13 , wherein
said second preheating temperature is 700 degrees C. or higher,
said light-emission control part is configured to control said halogen lamp and said flash lamp such that the temperature of the surface of the substrate reaches 1100 degrees C. or higher by the emission of the flashing light from said flash lamp in said second flash heating.

15. The heat treatment apparatus according to claim 13 , wherein
said light-emission control part is configured to control said flash lamp such that said flash lamp further emits a further heat treating flashing light to the substrate, during a time period between said first flash heating and said second flash heating.

16. The hea

Assignees

• Yokouchi Kenichi
• Screen Holdings Co Ltd

Inventors

• Yokouchi Kenichi

Classifications

• H10P72/7602

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P34/422

  using incoherent radiation · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D30/0227

  having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET · CPC title