Sub word line driver and semiconductor integrated circuit device

Patent metadata

Field	Value
Publication number	US-9082467-B2
Application number	US-201514590503-A
Country	US
Kind code	B2
Filing date	Jan 6, 2015
Priority date	Dec 15, 2011
Publication date	Jul 14, 2015
Grant date	Jul 14, 2015

Abstract

A sub word line driver and a semiconductor integrated circuit device having the same are provided. The semiconductor integrated circuit device includes adjacent four sub word line drivers configured to drive four sub word lines in response to signals of four main word lines, wherein first and second sub word line drivers of adjacent sub word line drivers share one keeper transistor with each other, and third and fourth sub word line drivers of the adjacent sub word line drivers share one keeper transistor with each other.

First claim

What is claimed is:

1. A sub word line driver of a semiconductor integrated circuit device, comprising:
a semiconductor substrate configured to comprise an N-well having PMOS transistors formed therein and a P-well having NMOS transistors formed therein;
four sub word lines configured to be extended in parallel over the N-well and P-well;
a sub word line selection line configured to be extended in a direction parallel with the four sub word lines;
first and second VSS lines…

Assignees

• Sk Hynix Inc

Inventors

• Yun Tae Sik
• Kim Dong Hwee

Classifications

• G11C5/02

  Physics · mapped topic

• G11C8/08 Primary

  Physics · mapped topic

• G11C11/4097

  Physics · mapped topic

• G11C11/4085

  Physics · mapped topic

• G11C11/4063

  Physics · mapped topic